Measurement and error analysis of Cu film thickness with Ta barrier layer on wafer for CMP application

Accurate thickness measurement of copper (Cu) film on silicon (Si)-based wafers is very important in the chemical mechanical polishing (CMP) process. For thickness measurement of Cu film, the eddy current method is widely adopted due to noncontact, high-efficiency, and high-accuracy characteristics....

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Bibliographic Details
Main Authors: Qu, Zilian, Wang, Wensong, Li, Xueli, Li, Qi, Zheng, Yuanjin
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2022
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Online Access:https://hdl.handle.net/10356/159502
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Institution: Nanyang Technological University
Language: English

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