Top electrode modulated W/Ag/MgO/Au resistive random access memory for improved electronic synapse performance
Resistive random access memory (ReRAM) is touted to replace silicon-based flash memory due to its low operating voltage, fast access speeds, and the potential to scale down to nm range for ultra-high density storage. In addition, its ability to retain multi-level resistance states makes it suitable...
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| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2022
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/161248 |
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| Institution: | Nanyang Technological University |
| Language: | English |