Top electrode modulated W/Ag/MgO/Au resistive random access memory for improved electronic synapse performance

• Main Authors: Izzat Aziz, Ciou, Jing-Hao, Kongcharoen, Haruethai, Lee,Pooi See
• Other Authors: School of Materials Science and Engineering
• Format: Article
• Language: English
• Published: 2022
• Subjects: Engineering::Materials; Electrodes; Flash Memory
• Online Access: https://hdl.handle.net/10356/161248
• Institution: Nanyang Technological University

Resistive random access memory (ReRAM) is touted to replace silicon-based flash memory due to its low operating voltage, fast access speeds, and the potential to scale down to nm range for ultra-high density storage. In addition, its ability to retain multi-level resistance states makes it suitable...