Top electrode modulated W/Ag/MgO/Au resistive random access memory for improved electronic synapse performance

Resistive random access memory (ReRAM) is touted to replace silicon-based flash memory due to its low operating voltage, fast access speeds, and the potential to scale down to nm range for ultra-high density storage. In addition, its ability to retain multi-level resistance states makes it suitable...

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Main Authors: Izzat Aziz, Ciou, Jing-Hao, Kongcharoen, Haruethai, Lee,Pooi See
Other Authors: School of Materials Science and Engineering
Format: Article
Language:English
Published: 2022
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Online Access:https://hdl.handle.net/10356/161248
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1612482023-07-14T16:07:36Z Top electrode modulated W/Ag/MgO/Au resistive random access memory for improved electronic synapse performance Izzat Aziz Ciou, Jing-Hao Kongcharoen, Haruethai Lee,Pooi See School of Materials Science and Engineering Engineering::Materials Electrodes Flash Memory Resistive random access memory (ReRAM) is touted to replace silicon-based flash memory due to its low operating voltage, fast access speeds, and the potential to scale down to nm range for ultra-high density storage. In addition, its ability to retain multi-level resistance states makes it suitable for neuromorphic computing application. Here, we develop a cationic ReRAM with a sputtered MgO as the insulating layer. The resistive switching properties of the Ag/MgO/Au ReRAM stack reveal a strong dependence on the sputtering conditions of MgO. Due to the highly stable sputtered MgO, repeatable resistive switching memory is achieved with a low ON voltage of ∼0.7 V and a memory window of ∼1 × 105. Limiting Ag diffusion through a modified top electrode in the W/Ag/MgO/Au stack significantly reduces the abruptness of resistive switching, thereby demonstrating analog switching capability. This phenomenon is evident in the improved linearity and symmetry of potentiation and depression weight modulation pulses, demonstrating ideal Hebbian synaptic learning rules. National Research Foundation (NRF) Published version This project was supported in part by the IAF-ICP Project under Grant No. I1801E0030 and the NRF Investigatorship under Grant No. NRF-NRFI2016-05. 2022-08-22T06:38:03Z 2022-08-22T06:38:03Z 2022 Journal Article Izzat Aziz, Ciou, J., Kongcharoen, H. & Lee, P. S. (2022). Top electrode modulated W/Ag/MgO/Au resistive random access memory for improved electronic synapse performance. Journal of Applied Physics, 132(1), 014502-. https://dx.doi.org/10.1063/5.0096620 0021-8979 https://hdl.handle.net/10356/161248 10.1063/5.0096620 2-s2.0-85133964536 1 132 014502 en I1801E0030 NRF-NRFI2016-05 Journal of Applied Physics © 2022 Author(s).]. All rights reserved. This paper was published by AIP Publishing in Journal of Applied Physics and is made available with permission of Author(s). application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Engineering::Materials
Electrodes
Flash Memory
spellingShingle Engineering::Materials
Electrodes
Flash Memory
Izzat Aziz
Ciou, Jing-Hao
Kongcharoen, Haruethai
Lee,Pooi See
Top electrode modulated W/Ag/MgO/Au resistive random access memory for improved electronic synapse performance
description Resistive random access memory (ReRAM) is touted to replace silicon-based flash memory due to its low operating voltage, fast access speeds, and the potential to scale down to nm range for ultra-high density storage. In addition, its ability to retain multi-level resistance states makes it suitable for neuromorphic computing application. Here, we develop a cationic ReRAM with a sputtered MgO as the insulating layer. The resistive switching properties of the Ag/MgO/Au ReRAM stack reveal a strong dependence on the sputtering conditions of MgO. Due to the highly stable sputtered MgO, repeatable resistive switching memory is achieved with a low ON voltage of ∼0.7 V and a memory window of ∼1 × 105. Limiting Ag diffusion through a modified top electrode in the W/Ag/MgO/Au stack significantly reduces the abruptness of resistive switching, thereby demonstrating analog switching capability. This phenomenon is evident in the improved linearity and symmetry of potentiation and depression weight modulation pulses, demonstrating ideal Hebbian synaptic learning rules.
author2 School of Materials Science and Engineering
author_facet School of Materials Science and Engineering
Izzat Aziz
Ciou, Jing-Hao
Kongcharoen, Haruethai
Lee,Pooi See
format Article
author Izzat Aziz
Ciou, Jing-Hao
Kongcharoen, Haruethai
Lee,Pooi See
author_sort Izzat Aziz
title Top electrode modulated W/Ag/MgO/Au resistive random access memory for improved electronic synapse performance
title_short Top electrode modulated W/Ag/MgO/Au resistive random access memory for improved electronic synapse performance
title_full Top electrode modulated W/Ag/MgO/Au resistive random access memory for improved electronic synapse performance
title_fullStr Top electrode modulated W/Ag/MgO/Au resistive random access memory for improved electronic synapse performance
title_full_unstemmed Top electrode modulated W/Ag/MgO/Au resistive random access memory for improved electronic synapse performance
title_sort top electrode modulated w/ag/mgo/au resistive random access memory for improved electronic synapse performance
publishDate 2022
url https://hdl.handle.net/10356/161248
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