Top electrode modulated W/Ag/MgO/Au resistive random access memory for improved electronic synapse performance
Resistive random access memory (ReRAM) is touted to replace silicon-based flash memory due to its low operating voltage, fast access speeds, and the potential to scale down to nm range for ultra-high density storage. In addition, its ability to retain multi-level resistance states makes it suitable...
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sg-ntu-dr.10356-1612482023-07-14T16:07:36Z Top electrode modulated W/Ag/MgO/Au resistive random access memory for improved electronic synapse performance Izzat Aziz Ciou, Jing-Hao Kongcharoen, Haruethai Lee,Pooi See School of Materials Science and Engineering Engineering::Materials Electrodes Flash Memory Resistive random access memory (ReRAM) is touted to replace silicon-based flash memory due to its low operating voltage, fast access speeds, and the potential to scale down to nm range for ultra-high density storage. In addition, its ability to retain multi-level resistance states makes it suitable for neuromorphic computing application. Here, we develop a cationic ReRAM with a sputtered MgO as the insulating layer. The resistive switching properties of the Ag/MgO/Au ReRAM stack reveal a strong dependence on the sputtering conditions of MgO. Due to the highly stable sputtered MgO, repeatable resistive switching memory is achieved with a low ON voltage of ∼0.7 V and a memory window of ∼1 × 105. Limiting Ag diffusion through a modified top electrode in the W/Ag/MgO/Au stack significantly reduces the abruptness of resistive switching, thereby demonstrating analog switching capability. This phenomenon is evident in the improved linearity and symmetry of potentiation and depression weight modulation pulses, demonstrating ideal Hebbian synaptic learning rules. National Research Foundation (NRF) Published version This project was supported in part by the IAF-ICP Project under Grant No. I1801E0030 and the NRF Investigatorship under Grant No. NRF-NRFI2016-05. 2022-08-22T06:38:03Z 2022-08-22T06:38:03Z 2022 Journal Article Izzat Aziz, Ciou, J., Kongcharoen, H. & Lee, P. S. (2022). Top electrode modulated W/Ag/MgO/Au resistive random access memory for improved electronic synapse performance. Journal of Applied Physics, 132(1), 014502-. https://dx.doi.org/10.1063/5.0096620 0021-8979 https://hdl.handle.net/10356/161248 10.1063/5.0096620 2-s2.0-85133964536 1 132 014502 en I1801E0030 NRF-NRFI2016-05 Journal of Applied Physics © 2022 Author(s).]. All rights reserved. This paper was published by AIP Publishing in Journal of Applied Physics and is made available with permission of Author(s). application/pdf |
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Engineering::Materials Electrodes Flash Memory Izzat Aziz Ciou, Jing-Hao Kongcharoen, Haruethai Lee,Pooi See Top electrode modulated W/Ag/MgO/Au resistive random access memory for improved electronic synapse performance |
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Resistive random access memory (ReRAM) is touted to replace silicon-based flash memory due to its low operating voltage, fast access speeds, and the potential to scale down to nm range for ultra-high density storage. In addition, its ability to retain multi-level resistance states makes it suitable for neuromorphic computing application. Here, we develop a cationic ReRAM with a sputtered MgO as the insulating layer. The resistive switching properties of the Ag/MgO/Au ReRAM stack reveal a strong dependence on the sputtering conditions of MgO. Due to the highly stable sputtered MgO, repeatable resistive switching memory is achieved with a low ON voltage of ∼0.7 V and a memory window of ∼1 × 105. Limiting Ag diffusion through a modified top electrode in the W/Ag/MgO/Au stack significantly reduces the abruptness of resistive switching, thereby demonstrating analog switching capability. This phenomenon is evident in the improved linearity and symmetry of potentiation and depression weight modulation pulses, demonstrating ideal Hebbian synaptic learning rules. |
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School of Materials Science and Engineering |
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School of Materials Science and Engineering Izzat Aziz Ciou, Jing-Hao Kongcharoen, Haruethai Lee,Pooi See |
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Article |
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Izzat Aziz Ciou, Jing-Hao Kongcharoen, Haruethai Lee,Pooi See |
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Izzat Aziz |
title |
Top electrode modulated W/Ag/MgO/Au resistive random access memory for improved electronic synapse performance |
title_short |
Top electrode modulated W/Ag/MgO/Au resistive random access memory for improved electronic synapse performance |
title_full |
Top electrode modulated W/Ag/MgO/Au resistive random access memory for improved electronic synapse performance |
title_fullStr |
Top electrode modulated W/Ag/MgO/Au resistive random access memory for improved electronic synapse performance |
title_full_unstemmed |
Top electrode modulated W/Ag/MgO/Au resistive random access memory for improved electronic synapse performance |
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top electrode modulated w/ag/mgo/au resistive random access memory for improved electronic synapse performance |
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2022 |
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https://hdl.handle.net/10356/161248 |
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