Design of a CMOS relaxation oscillator with reduced circuit sensitivity

A fully-integrated CMOS relaxation oscillator which is realized in 40nm CMOS technology is presented. The oscillator includes a stable 2-Transistor based voltage reference without operational amplifier, a simple current reference employing the temperature-compensated composite resistor and the appro...

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Main Author: Liao, Yizhuo
Other Authors: Chan Pak Kwong
Format: Thesis-Master by Coursework
Language:English
Published: Nanyang Technological University 2022
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Online Access:https://hdl.handle.net/10356/163611
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1636112023-07-04T17:48:58Z Design of a CMOS relaxation oscillator with reduced circuit sensitivity Liao, Yizhuo Chan Pak Kwong School of Electrical and Electronic Engineering epkchan@ntu.edu.sg Engineering::Electrical and electronic engineering::Electronic circuits A fully-integrated CMOS relaxation oscillator which is realized in 40nm CMOS technology is presented. The oscillator includes a stable 2-Transistor based voltage reference without operational amplifier, a simple current reference employing the temperature-compensated composite resistor and the approximated Complementary-to-Absolute-Temperature (CTAT) delay based comparators compensate the approximated Proportional-to-Absolute-Temperature (PTAT) delay arising from the leakage currents in switches. This relaxation oscillator is designed to output a square wave with frequency of 64kHz in duty cycle of 50% at 1.1V supply. The simulation results have demonstrated that the circuit can generate a square wave with stable frequency against temperature and supply variation whilst consuming low current consumption. For temperature range from -20°C to 80°C at 1.1V supply, the oscillator’ output frequency has achieved temperature coefficient (T.C.) of 12.4 ppm/°C in typical corner in one sample simulation. For 200-sample Monte Carlo simulation, the obtained T.C. is 25 ppm/°C. Under typical corner and room temperature, the simulated line sensitivity is 0.045%/V over the supply from 1.1V to 1.6V and the dynamic current consumption is 552nA. A better figure-of-merit (FOM), which equals to 0.129%, is displayed when compared to the representative prior-art works. Master of Science (Electronics) 2022-12-12T08:28:15Z 2022-12-12T08:28:15Z 2022 Thesis-Master by Coursework Liao, Y. (2022). Design of a CMOS relaxation oscillator with reduced circuit sensitivity. Master's thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/163611 https://hdl.handle.net/10356/163611 en ISM-DISS-02914 application/pdf Nanyang Technological University
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Engineering::Electrical and electronic engineering::Electronic circuits
spellingShingle Engineering::Electrical and electronic engineering::Electronic circuits
Liao, Yizhuo
Design of a CMOS relaxation oscillator with reduced circuit sensitivity
description A fully-integrated CMOS relaxation oscillator which is realized in 40nm CMOS technology is presented. The oscillator includes a stable 2-Transistor based voltage reference without operational amplifier, a simple current reference employing the temperature-compensated composite resistor and the approximated Complementary-to-Absolute-Temperature (CTAT) delay based comparators compensate the approximated Proportional-to-Absolute-Temperature (PTAT) delay arising from the leakage currents in switches. This relaxation oscillator is designed to output a square wave with frequency of 64kHz in duty cycle of 50% at 1.1V supply. The simulation results have demonstrated that the circuit can generate a square wave with stable frequency against temperature and supply variation whilst consuming low current consumption. For temperature range from -20°C to 80°C at 1.1V supply, the oscillator’ output frequency has achieved temperature coefficient (T.C.) of 12.4 ppm/°C in typical corner in one sample simulation. For 200-sample Monte Carlo simulation, the obtained T.C. is 25 ppm/°C. Under typical corner and room temperature, the simulated line sensitivity is 0.045%/V over the supply from 1.1V to 1.6V and the dynamic current consumption is 552nA. A better figure-of-merit (FOM), which equals to 0.129%, is displayed when compared to the representative prior-art works.
author2 Chan Pak Kwong
author_facet Chan Pak Kwong
Liao, Yizhuo
format Thesis-Master by Coursework
author Liao, Yizhuo
author_sort Liao, Yizhuo
title Design of a CMOS relaxation oscillator with reduced circuit sensitivity
title_short Design of a CMOS relaxation oscillator with reduced circuit sensitivity
title_full Design of a CMOS relaxation oscillator with reduced circuit sensitivity
title_fullStr Design of a CMOS relaxation oscillator with reduced circuit sensitivity
title_full_unstemmed Design of a CMOS relaxation oscillator with reduced circuit sensitivity
title_sort design of a cmos relaxation oscillator with reduced circuit sensitivity
publisher Nanyang Technological University
publishDate 2022
url https://hdl.handle.net/10356/163611
_version_ 1772828413653942272