Wafer-scale nanostructured black silicon with morphology engineering via advanced Sn-assisted dry etching for sensing and solar cell applications

• المؤلفون الرئيسيون: Wu, Shaoteng, Chen, Qimiao, Zhang, Lin, Ren, Huixue, Zhou, Hao, Hu, Liangxing, Tan, Chuan Seng
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2023
• الموضوعات: Engineering::Electrical and electronic engineering; Germanium; Tin; Black Si
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/164695
• المؤسسة: Nanyang Technological University

Black-Si (b-Si) providing broadband light antireflection has become a versatile substrate for photodetector, photo-electric catalysis, sensor, and photovoltaic devices. However, the conventional fabrication methods suffer from single morphology, low yield, or frangibility. In this work, we present a...