Transparent electronic and photoelectric synaptic transistors based on the combination of an InGaZnO channel and a TaOx gate dielectric

• المؤلفون الرئيسيون: Li, Yuanbo, Chen, Tupei, Ju, Xin, Salim, Teddy
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2023
• الموضوعات: Engineering::Electrical and electronic engineering; Engineering::Materials; Brain; Gate Dielectrics
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/164997

A transparent thin film transistor (TFT) based on the combination of an InGaZnO channel and a high-κ (the dielectric constant is about 42.6) TaOx gate dielectric layer is fabricated. The TFT shows robust anticlockwise hysteresis under DC voltage sweep and synaptic behaviors (i.e., excitatory postsy...