Active ultrahigh-Q (0.2 × 10⁶) THz topological cavities on a chip

Rapid scaling of semiconductor devices has led to an increase in the number of processor cores and integrated functionalities onto a single chip to support the growing demands of high-speed and large-volume consumer electronics. To meet this burgeoning demand, an improved interconnect capacity in te...

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Bibliographic Details
Main Authors: Kumar, Abhishek, Gupta, Manoj, Pitchappa, Prakash, Tan, Thomas CaiWei, Chattopadhyay, Udvas, Ducournau, Guillaume, Wang, Nan, Chong, Yidong, Singh, Ranjan
Other Authors: School of Physical and Mathematical Sciences
Format: Article
Language:English
Published: 2023
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Online Access:https://hdl.handle.net/10356/165327
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Institution: Nanyang Technological University
Language: English
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Summary:Rapid scaling of semiconductor devices has led to an increase in the number of processor cores and integrated functionalities onto a single chip to support the growing demands of high-speed and large-volume consumer electronics. To meet this burgeoning demand, an improved interconnect capacity in terms of bandwidth density and active tunability is required for enhanced throughput and energy efficiency. Low-loss terahertz silicon interconnects with larger bandwidth offer a solution for the existing inter-/intrachip bandwidth density and energy-efficiency bottleneck. Here, a low-loss terahertz topological interconnect-cavity system is presented that can actively route signals through sharp bends, by critically coupling to a topological cavity with an ultrahigh-quality (Q) factor of 0.2 × 106 . The topologically protected large Q factor cavity enables energy-efficient optical control showing 60 dB modulation. Dynamic control is further demonstrated of the critical coupling between the topological interconnect-cavity for on-chip active tailoring of the cavity resonance linewidth, frequency, and modulation through complete suppression of the back reflection. The silicon topological cavity is complementary metal-oxide-semiconductor (CMOS)-compatible and highly desirable for hybrid electronic-photonic technologies for sixth (6G) generation terahertz communication devices. Ultrahigh-Q cavity also paves the path for designing ultrasensitive topological sensors, terahertz topological integrated circuits, and nonlinear topological photonic devices.