Active ultrahigh-Q (0.2 × 10⁶) THz topological cavities on a chip

Rapid scaling of semiconductor devices has led to an increase in the number of processor cores and integrated functionalities onto a single chip to support the growing demands of high-speed and large-volume consumer electronics. To meet this burgeoning demand, an improved interconnect capacity in te...

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Main Authors: Kumar, Abhishek, Gupta, Manoj, Pitchappa, Prakash, Tan, Thomas CaiWei, Chattopadhyay, Udvas, Ducournau, Guillaume, Wang, Nan, Chong, Yidong, Singh, Ranjan
Other Authors: School of Physical and Mathematical Sciences
Format: Article
Language:English
Published: 2023
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Online Access:https://hdl.handle.net/10356/165327
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1653272023-04-13T02:34:52Z Active ultrahigh-Q (0.2 × 10⁶) THz topological cavities on a chip Kumar, Abhishek Gupta, Manoj Pitchappa, Prakash Tan, Thomas CaiWei Chattopadhyay, Udvas Ducournau, Guillaume Wang, Nan Chong, Yidong Singh, Ranjan School of Physical and Mathematical Sciences Centre for Disruptive Photonic Technologies (CDPT) The Photonics Institute Science::Physics::Optics and light 6G Communication On-Chip Modulators Rapid scaling of semiconductor devices has led to an increase in the number of processor cores and integrated functionalities onto a single chip to support the growing demands of high-speed and large-volume consumer electronics. To meet this burgeoning demand, an improved interconnect capacity in terms of bandwidth density and active tunability is required for enhanced throughput and energy efficiency. Low-loss terahertz silicon interconnects with larger bandwidth offer a solution for the existing inter-/intrachip bandwidth density and energy-efficiency bottleneck. Here, a low-loss terahertz topological interconnect-cavity system is presented that can actively route signals through sharp bends, by critically coupling to a topological cavity with an ultrahigh-quality (Q) factor of 0.2 × 106 . The topologically protected large Q factor cavity enables energy-efficient optical control showing 60 dB modulation. Dynamic control is further demonstrated of the critical coupling between the topological interconnect-cavity for on-chip active tailoring of the cavity resonance linewidth, frequency, and modulation through complete suppression of the back reflection. The silicon topological cavity is complementary metal-oxide-semiconductor (CMOS)-compatible and highly desirable for hybrid electronic-photonic technologies for sixth (6G) generation terahertz communication devices. Ultrahigh-Q cavity also paves the path for designing ultrasensitive topological sensors, terahertz topological integrated circuits, and nonlinear topological photonic devices. National Research Foundation (NRF) The authors acknowledge the research funding support from National Research Foundation (NRF) Singapore, Grant No: NRF-CRP23-2019-0005. G.D. acknowledges the support of IEMN Ultra-High Data-rate (UHD) flagship, as well as the CPER Photonics 4 Society. 2023-04-13T02:34:52Z 2023-04-13T02:34:52Z 2022 Journal Article Kumar, A., Gupta, M., Pitchappa, P., Tan, T. C., Chattopadhyay, U., Ducournau, G., Wang, N., Chong, Y. & Singh, R. (2022). Active ultrahigh-Q (0.2 × 10⁶) THz topological cavities on a chip. Advanced Materials, 34(27), 2202370-. https://dx.doi.org/10.1002/adma.202202370 0935-9648 https://hdl.handle.net/10356/165327 10.1002/adma.202202370 35419880 2-s2.0-85130298432 27 34 2202370 en NRF-CRP23-2019-0005 Advanced Materials © 2022 Wiley-VCH GmbH. All rights reserved.
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Science::Physics::Optics and light
6G Communication
On-Chip Modulators
spellingShingle Science::Physics::Optics and light
6G Communication
On-Chip Modulators
Kumar, Abhishek
Gupta, Manoj
Pitchappa, Prakash
Tan, Thomas CaiWei
Chattopadhyay, Udvas
Ducournau, Guillaume
Wang, Nan
Chong, Yidong
Singh, Ranjan
Active ultrahigh-Q (0.2 × 10⁶) THz topological cavities on a chip
description Rapid scaling of semiconductor devices has led to an increase in the number of processor cores and integrated functionalities onto a single chip to support the growing demands of high-speed and large-volume consumer electronics. To meet this burgeoning demand, an improved interconnect capacity in terms of bandwidth density and active tunability is required for enhanced throughput and energy efficiency. Low-loss terahertz silicon interconnects with larger bandwidth offer a solution for the existing inter-/intrachip bandwidth density and energy-efficiency bottleneck. Here, a low-loss terahertz topological interconnect-cavity system is presented that can actively route signals through sharp bends, by critically coupling to a topological cavity with an ultrahigh-quality (Q) factor of 0.2 × 106 . The topologically protected large Q factor cavity enables energy-efficient optical control showing 60 dB modulation. Dynamic control is further demonstrated of the critical coupling between the topological interconnect-cavity for on-chip active tailoring of the cavity resonance linewidth, frequency, and modulation through complete suppression of the back reflection. The silicon topological cavity is complementary metal-oxide-semiconductor (CMOS)-compatible and highly desirable for hybrid electronic-photonic technologies for sixth (6G) generation terahertz communication devices. Ultrahigh-Q cavity also paves the path for designing ultrasensitive topological sensors, terahertz topological integrated circuits, and nonlinear topological photonic devices.
author2 School of Physical and Mathematical Sciences
author_facet School of Physical and Mathematical Sciences
Kumar, Abhishek
Gupta, Manoj
Pitchappa, Prakash
Tan, Thomas CaiWei
Chattopadhyay, Udvas
Ducournau, Guillaume
Wang, Nan
Chong, Yidong
Singh, Ranjan
format Article
author Kumar, Abhishek
Gupta, Manoj
Pitchappa, Prakash
Tan, Thomas CaiWei
Chattopadhyay, Udvas
Ducournau, Guillaume
Wang, Nan
Chong, Yidong
Singh, Ranjan
author_sort Kumar, Abhishek
title Active ultrahigh-Q (0.2 × 10⁶) THz topological cavities on a chip
title_short Active ultrahigh-Q (0.2 × 10⁶) THz topological cavities on a chip
title_full Active ultrahigh-Q (0.2 × 10⁶) THz topological cavities on a chip
title_fullStr Active ultrahigh-Q (0.2 × 10⁶) THz topological cavities on a chip
title_full_unstemmed Active ultrahigh-Q (0.2 × 10⁶) THz topological cavities on a chip
title_sort active ultrahigh-q (0.2 × 10⁶) thz topological cavities on a chip
publishDate 2023
url https://hdl.handle.net/10356/165327
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