Characterization on ferroelectric scandium-doped aluminum nitride for memory applications
Ferroelectric memory is one of the promising candidates to replace FLASH as a new generation of non-volatile memories (NVM), with the advantages of low power consumption, thigh writing and erasing speed and large endurance. With the discovery of ferroelectricity in scandium doped aluminum nitride...
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| 格式: | Thesis-Master by Coursework |
| 語言: | English |
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Nanyang Technological University
2023
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| 在線閱讀: | https://hdl.handle.net/10356/166378 |
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