Mitigation of corner polysilicon residues through nitride liner etch relocation

• المؤلف الرئيسي: Zheng, Zhe
• مؤلفون آخرون: Wang Hong
• التنسيق: Thesis-Master by Coursework
• اللغة: English
• منشور في: Nanyang Technological University 2023
• الموضوعات: Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/166578
• المؤسسة: Nanyang Technological University

NAND flash memory has grown enormously and becomes the most popular non-volatile SSD (Solid State Drives). After 2D NAND reaches its limit, the 3D structure has become the mainstream of NAND. 3D NAND increases capacity in a given footprint without an excessive shrinking of the flash memory chips to...