Integration of low-κ dielectric liner in through silicon via and thermomechanical stress relief

• Main Authors: Ghosh, Kaushik, Zhang, Jiye, Zhang, Lin, Dong, Yuanwei, Li, Hong Yu, Tan, Cher Ming, Xia, Guangrui, Tan, Chuan Seng
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/99278; http://hdl.handle.net/10220/12600
• Institution: Nanyang Technological University

Through silicon via (TSV) consists of a copper (Cu) core isolated by a dielectric liner. The thermomechanical stress originating from the mismatch in the coefficient of thermal expansion of Cu and silicon is a serious concern on mechanical reliability and electrical variability. The effect on thermo...