Resistive memory 2
This paper presents a study on the electrical characteristics of conductive-based resistive random-access memory (CBRAM) with Silver (Ag) top electrode (TE), Indium Gallium Zinc Oxide (IGZO), and Germanium Sulfide (GeS) as the switching layer and Indium Tin Oxide (ITO) as the bottom electrode (BE) i...
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| Format: | Final Year Project |
| Language: | English |
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Nanyang Technological University
2023
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| Online Access: | https://hdl.handle.net/10356/166904 |
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| Institution: | Nanyang Technological University |
| Language: | English |