Resistive memory 2

This paper presents a study on the electrical characteristics of conductive-based resistive random-access memory (CBRAM) with Silver (Ag) top electrode (TE), Indium Gallium Zinc Oxide (IGZO), and Germanium Sulfide (GeS) as the switching layer and Indium Tin Oxide (ITO) as the bottom electrode (BE) i...

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Main Author: Lim, Boon Wee
Other Authors: Ang Diing Shenp
Format: Final Year Project
Language:English
Published: Nanyang Technological University 2023
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Online Access:https://hdl.handle.net/10356/166904
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Institution: Nanyang Technological University
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spelling sg-ntu-dr.10356-1669042023-07-07T15:59:36Z Resistive memory 2 Lim, Boon Wee Ang Diing Shenp School of Electrical and Electronic Engineering EDSAng@ntu.edu.sg Engineering::Electrical and electronic engineering This paper presents a study on the electrical characteristics of conductive-based resistive random-access memory (CBRAM) with Silver (Ag) top electrode (TE), Indium Gallium Zinc Oxide (IGZO), and Germanium Sulfide (GeS) as the switching layer and Indium Tin Oxide (ITO) as the bottom electrode (BE) in the metal-insulator-metal (MIM) structure. The study aims to understand the performance of the device under varying magnitudes of DC stress and to understand the reaction that occurs in the materials by analyzing the results of the MIM structure. CBRAM with a specific MIM structure has been shown to exhibit stable switching characteristics using Silver (Ag) as the top electrode (TE), Germanium Sulfide (GeS) as the insulation layer, and Platinum (Pt) as the BE. However, ITO offers advantages such as higher transparency and lower cost, which makes it a potentially attractive alternative to Pt. This study will contribute to a better understanding of the compatibility of materials used in CBRAM devices, and the potential benefits of using ITO as the BE. Bachelor of Engineering (Electrical and Electronic Engineering) 2023-05-16T01:53:36Z 2023-05-16T01:53:36Z 2023 Final Year Project (FYP) Lim, B. W. (2023). Resistive memory 2. Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/166904 https://hdl.handle.net/10356/166904 en A2079-221 application/pdf Nanyang Technological University
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Engineering::Electrical and electronic engineering
spellingShingle Engineering::Electrical and electronic engineering
Lim, Boon Wee
Resistive memory 2
description This paper presents a study on the electrical characteristics of conductive-based resistive random-access memory (CBRAM) with Silver (Ag) top electrode (TE), Indium Gallium Zinc Oxide (IGZO), and Germanium Sulfide (GeS) as the switching layer and Indium Tin Oxide (ITO) as the bottom electrode (BE) in the metal-insulator-metal (MIM) structure. The study aims to understand the performance of the device under varying magnitudes of DC stress and to understand the reaction that occurs in the materials by analyzing the results of the MIM structure. CBRAM with a specific MIM structure has been shown to exhibit stable switching characteristics using Silver (Ag) as the top electrode (TE), Germanium Sulfide (GeS) as the insulation layer, and Platinum (Pt) as the BE. However, ITO offers advantages such as higher transparency and lower cost, which makes it a potentially attractive alternative to Pt. This study will contribute to a better understanding of the compatibility of materials used in CBRAM devices, and the potential benefits of using ITO as the BE.
author2 Ang Diing Shenp
author_facet Ang Diing Shenp
Lim, Boon Wee
format Final Year Project
author Lim, Boon Wee
author_sort Lim, Boon Wee
title Resistive memory 2
title_short Resistive memory 2
title_full Resistive memory 2
title_fullStr Resistive memory 2
title_full_unstemmed Resistive memory 2
title_sort resistive memory 2
publisher Nanyang Technological University
publishDate 2023
url https://hdl.handle.net/10356/166904
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