Resistive memory 2

• Main Author: Lim, Boon Wee
• Other Authors: Ang Diing Shenp
• Format: Final Year Project
• Language: English
• Published: Nanyang Technological University 2023
• Subjects: Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/166904
• Institution: Nanyang Technological University

This paper presents a study on the electrical characteristics of conductive-based resistive random-access memory (CBRAM) with Silver (Ag) top electrode (TE), Indium Gallium Zinc Oxide (IGZO), and Germanium Sulfide (GeS) as the switching layer and Indium Tin Oxide (ITO) as the bottom electrode (BE) i...