Resistive memory 2

This paper presents a study on the electrical characteristics of conductive-based resistive random-access memory (CBRAM) with Silver (Ag) top electrode (TE), Indium Gallium Zinc Oxide (IGZO), and Germanium Sulfide (GeS) as the switching layer and Indium Tin Oxide (ITO) as the bottom electrode (BE) i...

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Bibliographic Details
Main Author: Lim, Boon Wee
Other Authors: Ang Diing Shenp
Format: Final Year Project
Language:English
Published: Nanyang Technological University 2023
Subjects:
Online Access:https://hdl.handle.net/10356/166904
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Institution: Nanyang Technological University
Language: English

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