Design of precision-aware subthreshold-based MOSFET voltage reference
A new precision-aware subthreshold-based MOSFET voltage reference is presented in this paper. The circuit was implemented TSMC-40 nm process technology. It consumed 9.6 μW at the supply voltage of 1.2 V. In this proposed work, by utilizing subthreshold-based MOSFET instead of bipolar junction transi...
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Main Authors: | , |
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Format: | Article |
Language: | English |
Published: |
2023
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/167028 |
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Institution: | Nanyang Technological University |
Language: | English |