Design of precision-aware subthreshold-based MOSFET voltage reference

A new precision-aware subthreshold-based MOSFET voltage reference is presented in this paper. The circuit was implemented TSMC-40 nm process technology. It consumed 9.6 μW at the supply voltage of 1.2 V. In this proposed work, by utilizing subthreshold-based MOSFET instead of bipolar junction transi...

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Main Authors: Mu, Shuzheng, Chan, Pak Kwong
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2023
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Online Access:https://hdl.handle.net/10356/167028
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1670282023-05-12T15:40:35Z Design of precision-aware subthreshold-based MOSFET voltage reference Mu, Shuzheng Chan, Pak Kwong School of Electrical and Electronic Engineering Engineering::Electrical and electronic engineering Voltage Reference Temperature Compensation A new precision-aware subthreshold-based MOSFET voltage reference is presented in this paper. The circuit was implemented TSMC-40 nm process technology. It consumed 9.6 μW at the supply voltage of 1.2 V. In this proposed work, by utilizing subthreshold-based MOSFET instead of bipolar junction transistor (BJT), relatively lower power consumption was obtained in the design while offering comparable precision to that offered by its BJT counterpart. Through the proposed second-order compensation, it achieved the temperature coefficient (T.C.) of 3.0 ppm/°C in the TT corner case and a 200-sample Monte-Carlo T.C. of 12.51 ppm/°C from -40 °C to 90 °C. This shows robust temperature insensitivity. The process sensitivity of Vref without and with trimming was 2.85% and 0.75%, respectively. The power supply rejection (PSR) was 71.65 dB at 100 Hz and 52.54 dB at 10 MHz. The Figure-of-Merit (FOM) for the total variation in output voltage was comparable with representative BJT circuits and better than subthreshold-based MOSFET circuits. Due to low T.C., low process sensitivity, and simplicity of the circuit architecture, the proposed work will be useful for sensor circuits with stringent requirements or other analog circuits that require high precision applications. Published version 2023-05-10T02:07:56Z 2023-05-10T02:07:56Z 2022 Journal Article Mu, S. & Chan, P. K. (2022). Design of precision-aware subthreshold-based MOSFET voltage reference. Sensors, 22(23), 9466-. https://dx.doi.org/10.3390/s22239466 1424-8220 https://hdl.handle.net/10356/167028 10.3390/s22239466 36502168 2-s2.0-85143826641 23 22 9466 en Sensors © 2022 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Engineering::Electrical and electronic engineering
Voltage Reference
Temperature Compensation
spellingShingle Engineering::Electrical and electronic engineering
Voltage Reference
Temperature Compensation
Mu, Shuzheng
Chan, Pak Kwong
Design of precision-aware subthreshold-based MOSFET voltage reference
description A new precision-aware subthreshold-based MOSFET voltage reference is presented in this paper. The circuit was implemented TSMC-40 nm process technology. It consumed 9.6 μW at the supply voltage of 1.2 V. In this proposed work, by utilizing subthreshold-based MOSFET instead of bipolar junction transistor (BJT), relatively lower power consumption was obtained in the design while offering comparable precision to that offered by its BJT counterpart. Through the proposed second-order compensation, it achieved the temperature coefficient (T.C.) of 3.0 ppm/°C in the TT corner case and a 200-sample Monte-Carlo T.C. of 12.51 ppm/°C from -40 °C to 90 °C. This shows robust temperature insensitivity. The process sensitivity of Vref without and with trimming was 2.85% and 0.75%, respectively. The power supply rejection (PSR) was 71.65 dB at 100 Hz and 52.54 dB at 10 MHz. The Figure-of-Merit (FOM) for the total variation in output voltage was comparable with representative BJT circuits and better than subthreshold-based MOSFET circuits. Due to low T.C., low process sensitivity, and simplicity of the circuit architecture, the proposed work will be useful for sensor circuits with stringent requirements or other analog circuits that require high precision applications.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Mu, Shuzheng
Chan, Pak Kwong
format Article
author Mu, Shuzheng
Chan, Pak Kwong
author_sort Mu, Shuzheng
title Design of precision-aware subthreshold-based MOSFET voltage reference
title_short Design of precision-aware subthreshold-based MOSFET voltage reference
title_full Design of precision-aware subthreshold-based MOSFET voltage reference
title_fullStr Design of precision-aware subthreshold-based MOSFET voltage reference
title_full_unstemmed Design of precision-aware subthreshold-based MOSFET voltage reference
title_sort design of precision-aware subthreshold-based mosfet voltage reference
publishDate 2023
url https://hdl.handle.net/10356/167028
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