Design of precision-aware subthreshold-based MOSFET voltage reference

A new precision-aware subthreshold-based MOSFET voltage reference is presented in this paper. The circuit was implemented TSMC-40 nm process technology. It consumed 9.6 μW at the supply voltage of 1.2 V. In this proposed work, by utilizing subthreshold-based MOSFET instead of bipolar junction transi...

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Bibliographic Details
Main Authors: Mu, Shuzheng, Chan, Pak Kwong
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2023
Subjects:
Online Access:https://hdl.handle.net/10356/167028
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Institution: Nanyang Technological University
Language: English
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