Design of precision-aware subthreshold-based MOSFET voltage reference

A new precision-aware subthreshold-based MOSFET voltage reference is presented in this paper. The circuit was implemented TSMC-40 nm process technology. It consumed 9.6 μW at the supply voltage of 1.2 V. In this proposed work, by utilizing subthreshold-based MOSFET instead of bipolar junction transi...

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Main Authors: Mu, Shuzheng, Chan, Pak Kwong
其他作者: School of Electrical and Electronic Engineering
格式: Article
語言:English
出版: 2023
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在線閱讀:https://hdl.handle.net/10356/167028
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機構: Nanyang Technological University
語言: English