Design of precision-aware subthreshold-based MOSFET voltage reference
A new precision-aware subthreshold-based MOSFET voltage reference is presented in this paper. The circuit was implemented TSMC-40 nm process technology. It consumed 9.6 μW at the supply voltage of 1.2 V. In this proposed work, by utilizing subthreshold-based MOSFET instead of bipolar junction transi...
Saved in:
Main Authors: | , |
---|---|
其他作者: | |
格式: | Article |
語言: | English |
出版: |
2023
|
主題: | |
在線閱讀: | https://hdl.handle.net/10356/167028 |
標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|
機構: | Nanyang Technological University |
語言: | English |