Design of precision-aware subthreshold-based MOSFET voltage reference

• المؤلفون الرئيسيون: Mu, Shuzheng, Chan, Pak Kwong
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2023
• الموضوعات: Engineering::Electrical and electronic engineering; Voltage Reference; Temperature Compensation
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/167028

A new precision-aware subthreshold-based MOSFET voltage reference is presented in this paper. The circuit was implemented TSMC-40 nm process technology. It consumed 9.6 μW at the supply voltage of 1.2 V. In this proposed work, by utilizing subthreshold-based MOSFET instead of bipolar junction transi...