Non-gold ohmic contact for GaN-on-Si HEMT

• المؤلف الرئيسي: Zhuang, Yihao
• مؤلفون آخرون: Ng Geok Ing
• التنسيق: Final Year Project
• اللغة: English
• منشور في: Nanyang Technological University 2023
• الموضوعات: Engineering::Electrical and electronic engineering::Semiconductors
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/167283

High power high frequency HEMT transistors are transistors that run at high frequency (100 kHz and above) for high-speed switching and high-power delivering applications. Kinds of III-V semiconductor materials have been studied to be applied to HEMT like GaAs, InP, and GaN. Owing to the high breakdo...