Numerical exploration of asymmetrical MOSFETs

• Main Author: Qiu, Zhaoxiang.
• Other Authors: Zhou Xing
• Format: Final Year Project
• Language: English
• Published: 2009
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• Online Access: http://hdl.handle.net/10356/16743
• Institution: Nanyang Technological University

Ideal MOSFET is intrinsically symmetrical in source and drain, and all existing models describing MOSFETs are built with this structural symmetry. There is increasing demand to exploit asymmetrical structures for performance optimization, such as asymmetric channel implant, LDD spacer process, and dual-material-gate MOSFETs. In this report, MOSFETs with source/drain asymmetry will be explored using Matlab numerical simulations in comparison with the symmetric counterpart. Through the project, students will gain insights into transistor operation and modeling, and extend novel ideas for real applications.