Electrical characterization of GaN-based Schottky diodes

• 主要作者: Muhamad Nursharil Zaini.
• 其他作者: K Radhakrishnan
• 格式: Final Year Project
• 語言: English
• 出版: 2009
• 主題: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• 在線閱讀: http://hdl.handle.net/10356/16749
• 機構: Nanyang Technological University

Gallium nitride (GaN) based Schottky diodes with different contact diameters of 0.8mm, 1mm and 1.3mm have been made by physical vapour deposition of (Electron-Beam) metal contacts onto a gallium nitride on sapphire (Al2O3) and gallium nitride on silicon wafers. A graphical user interface based on...