Electrical characterization of GaN-based Schottky diodes

• Main Author: Muhamad Nursharil Zaini.
• Other Authors: K Radhakrishnan
• Format: Final Year Project
• Language: English
• Published: 2009
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• Online Access: http://hdl.handle.net/10356/16749
• Institution: Nanyang Technological University

Gallium nitride (GaN) based Schottky diodes with different contact diameters of 0.8mm, 1mm and 1.3mm have been made by physical vapour deposition of (Electron-Beam) metal contacts onto a gallium nitride on sapphire (Al2O3) and gallium nitride on silicon wafers. A graphical user interface based on...