Electrical characterization of GaN-based Schottky diodes

• المؤلف الرئيسي: Muhamad Nursharil Zaini.
• مؤلفون آخرون: K Radhakrishnan
• التنسيق: Final Year Project
• اللغة: English
• منشور في: 2009
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/16749
• المؤسسة: Nanyang Technological University

Gallium nitride (GaN) based Schottky diodes with different contact diameters of 0.8mm, 1mm and 1.3mm have been made by physical vapour deposition of (Electron-Beam) metal contacts onto a gallium nitride on sapphire (Al2O3) and gallium nitride on silicon wafers. A graphical user interface based on...