Degradation study of GaN-based high electron mobility transistors

• المؤلف الرئيسي: Lius, Melina Novalia Jontera
• مؤلفون آخرون: Gan Chee Lip
• التنسيق: Final Year Project
• اللغة: English
• منشور في: Nanyang Technological University 2023
• الموضوعات: Engineering::Materials
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/167553

"Moore's Law" states that the number of transistors in an integrated circuit will increase twice roughly every two years. As observed since the 1970s, the number of transistors per silicon integrated circuit doubled every 18 months, consistent with this trend. This increase in transis...