Degradation study of GaN-based high electron mobility transistors

• 主要作者: Lius, Melina Novalia Jontera
• 其他作者: Gan Chee Lip
• 格式: Final Year Project
• 語言: English
• 出版: Nanyang Technological University 2023
• 主題: Engineering::Materials
• 在線閱讀: https://hdl.handle.net/10356/167553
• 機構: Nanyang Technological University

"Moore's Law" states that the number of transistors in an integrated circuit will increase twice roughly every two years. As observed since the 1970s, the number of transistors per silicon integrated circuit doubled every 18 months, consistent with this trend. This increase in transis...