2D semimetal with ultrahigh work function for sub-0.1 V threshold voltage operation of metal-semiconductor field-effect transistors

• المؤلفون الرئيسيون: Zhang, Tianjiao, Miao, Jialei, Huang, Chun, Bian, Zheng, Tian, Maoxin, Chen, Haohan, Duan, Ruihuan, Wang, Lin, Liu, Zheng, Qiao, Jingsi, Xu, Yang, Yu, Bin, Zhao, Yuda
• مؤلفون آخرون: School of Materials Science and Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2023
• الموضوعات: Engineering::Materials::Nanostructured materials; Engineering::Materials::Microelectronics and semiconductor materials; Semimetal; 2D Heterojunction
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/169319

Metal-semiconductor field-effect transistors (MESFETs) offer the advantages of efficient gate control and low power consumption due to the large junction capacitance. However, the strong Fermi-level pinning caused by the metal-induced gap states makes it a great challenge to build a high-quality Sch...