Femtosecond laser-induced nano-joining of volatile tellurium nanotube memristor

• المؤلفون الرئيسيون: Yu, Yongchao, Joshi, Pooran, Bridges, Denzel, Fieser, David, Hu, Anming
• مؤلفون آخرون: School of Mechanical and Aerospace Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2023
• الموضوعات: Engineering::Mechanical engineering; Memristor; Tellurium Nanotube
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/169593

Nanowire/nanotube memristor devices provide great potential for random-access high-density resistance storage. However, fabricating high-quality and stable memristors is still challenging. This paper reports multileveled resistance states of tellurium (Te) nanotube based on the clean-room free femto...