Surface morphology evolution of N-polar GaN on SiC for HEMT heterostructures grown by plasma-assisted molecular beam epitaxy

• Main Authors: Huo, Lili, Lingaparthi, Ravikiran, Dharmarasu, Nethaji, Radhakrishnan, K., Chan, Casimir
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2023
• Subjects: Engineering::Electrical and electronic engineering; N-polar GaN; Surface Morphology Evolution
• Online Access: https://hdl.handle.net/10356/169937
• Institution: Nanyang Technological University

The surface morphology evolution of N-polar GaN with growth time was investigated and compared with Ga-polar GaN. N-polar GaN directly grown on SiC substrates was found to have slower 3D-to-2D growth transformation and less coalescence than the Ga-polar counterpart, resulting in rougher surface morp...