Forming-free, self-compliance WTe₂-based conductive bridge RAM with highly uniform multilevel switching for high-density memory

• المؤلفون الرئيسيون: Abbas, Haider, Ali, Asif, Li, Jiayi, Tun, Thaw Tint Te, Ang, Diing Shenp
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2023
• الموضوعات: Engineering::Electrical and electronic engineering; Self-Compliance; Forming-Free
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/170124

In this work, forming-free and self-limited resistive switching characteristics are demonstrated in the transition-metal-chalcogenide-based conductive bridge RAM devices. Owing to the choice of a suitable solid electrolyte, the proposed WTe2-based devices present excellent switching characteristics...