Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures—experimental evidence of the hole trap state

• المؤلفون الرئيسيون: Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K., Huo, Lili
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2023
• الموضوعات: Engineering::Electrical and electronic engineering; Transistor Heterostructures; Trap State
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/171425

Multichannel high electron mobility transistor (MC-HEMT) heterostructures are one of the choices for improved power performance of GaN HEMTs. By comparing the experimentally obtained two-dimensional electron gas (2DEG) concentration of unintentionally doped (UID) AlGaN/GaN MC-HEMTs with simulated 2D...