Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures—experimental evidence of the hole trap state

• Main Authors: Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K., Huo, Lili
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Article
• 語言: English
• 出版: 2023
• 主題: Engineering::Electrical and electronic engineering; Transistor Heterostructures; Trap State
• 在線閱讀: https://hdl.handle.net/10356/171425

Multichannel high electron mobility transistor (MC-HEMT) heterostructures are one of the choices for improved power performance of GaN HEMTs. By comparing the experimentally obtained two-dimensional electron gas (2DEG) concentration of unintentionally doped (UID) AlGaN/GaN MC-HEMTs with simulated 2D...