Simulation of post-breakdown transistor performance in ultrathin gate dielectrics-based nanoscale MOSFETs

• 主要作者: Yaw, Meng Kwan.
• 其他作者: Pey Kin Leong
• 格式: Final Year Project
• 語言: English
• 出版: 2009
• 主題: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• 在線閱讀: http://hdl.handle.net/10356/17188

The purpose of this project is to simulate the post-breakdown transistor performance in ultrathin gate dielectric. The simulator used was TSUPREM-4 and MEDICI, which is widely used in the semiconductor industry for simulation and analyze semiconductor processing. The simulation was done on a 0.13μm...