Analysis of thermodynamic resistive switching in ZnO-based RRAM device

• Main Authors: Bature, Usman Isyaku, Nawi, Illani Mohd, Khir, Mohd Haris Md, Zahoor, Furqan, Hashwan, Saeed S Ba, Algamili, Abdullah Saleh, Abbas, Haider
• Other Authors: School of Computer Science and Engineering
• Format: Article
• Language: English
• Published: 2023
• Subjects: Engineering::Electrical and electronic engineering; Resistive Switching; Thermodynamic Process
• Online Access: https://hdl.handle.net/10356/172044
• Institution: Nanyang Technological University

Due to its excellent performance, resistive random access memory (RRAM) has become one of the most appealing and promising types of memory. However, RRAM has significant problems concerning understanding and modelling the resistive-switching mechanism, despite being very promising from the perspecti...