p-GaN/n-IGZO self-powered ultraviolet photodetector with ultralow dark current and high sensitivity

• المؤلفون الرئيسيون: Liao, Yikai, Kim, You Jin, Kim, Munho
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2024
• الموضوعات: Engineering::Electrical and electronic engineering; Ultraviolet; Gallium Nitride
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/173308
• المؤسسة: Nanyang Technological University

Self-powered ultraviolet (UV) photodetector has attracted growing research interest for applications in biological and human related fields with a low power consumption. However, typical construction strategies of heterojunction require materials with high crystal quality to realize high device perf...