p-GaN/n-IGZO self-powered ultraviolet photodetector with ultralow dark current and high sensitivity
Self-powered ultraviolet (UV) photodetector has attracted growing research interest for applications in biological and human related fields with a low power consumption. However, typical construction strategies of heterojunction require materials with high crystal quality to realize high device perf...
Saved in:
Main Authors: | Liao, Yikai, Kim, You Jin, Kim, Munho |
---|---|
Other Authors: | School of Electrical and Electronic Engineering |
Format: | Article |
Language: | English |
Published: |
2024
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/173308 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
Similar Items
-
Antireflective GaN nanoridge texturing by metal-assisted chemical etching via a thermally dewetted Pt catalyst network for highly responsive ultraviolet photodiodes
by: Liao, Yikai, et al.
Published: (2023) -
Effect of post-deposition annealing on the interface electronic structures of Al2O3-Capped GaN and GaN/AlGaN/GaN heterostructure
by: Duan, Tian Li, et al.
Published: (2019) -
Experimental demonstration of a two-dimensional hole gas in a GaN/AlGaN/GaN based heterostructure by optical spectroscopy
by: Méchin, Loïc, et al.
Published: (2024) -
Synthesis of GaN nanowires on gold-coated substrates by pulsed laser ablation
by: Ng, D.K.T., et al.
Published: (2014) -
Improved DC performance of AlGaN/GaN high electron mobility transistors using hafnium oxide for surface passivation
by: Liu, C., et al.
Published: (2014)