p-GaN/n-IGZO self-powered ultraviolet photodetector with ultralow dark current and high sensitivity

p-GaN/n-IGZO self-powered ultraviolet photodetector with ultralow dark current and high sensitivity

Self-powered ultraviolet (UV) photodetector has attracted growing research interest for applications in biological and human related fields with a low power consumption. However, typical construction strategies of heterojunction require materials with high crystal quality to realize high device perf...

Full description

Saved in:
Bibliographic Details
Main Authors: Liao, Yikai, Kim, You Jin, Kim, Munho
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2024
Subjects:
Engineering::Electrical and electronic engineering
Ultraviolet
Gallium Nitride
Online Access:https://hdl.handle.net/10356/173308
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English

Internet

https://hdl.handle.net/10356/173308

Similar Items