All-around HfO₂ stressor for tensile strain in GeSn-on-insulator nanobeam lasers

• Main Authors: Joo, Hyo-Jun, Kim, Youngmin, Chen, Melvina, Burt, Daniel, Zhang, Lin, Son, Bongkwon, Luo, Manlin, Ikonic, Zoran, Lee, Chulwon, Cho, Yong-Hoon, Tan, Chuan Seng, Nam, Donguk
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2024
• Subjects: Engineering::Electrical and electronic engineering; Atomic Layer Deposition; Photonic Crystal
• Online Access: https://hdl.handle.net/10356/173311
• Institution: Nanyang Technological University

Tensile strained GeSn alloys are considered a key enabler for the realization of complementary metal-oxide-semiconductor laser sources. However, the tensile strained GeSn lasers reported to date require complex fabrication processes for applying tensile strain in GeSn, preventing tensile GeSn lasers...