All-around HfO₂ stressor for tensile strain in GeSn-on-insulator nanobeam lasers

Tensile strained GeSn alloys are considered a key enabler for the realization of complementary metal-oxide-semiconductor laser sources. However, the tensile strained GeSn lasers reported to date require complex fabrication processes for applying tensile strain in GeSn, preventing tensile GeSn lasers...

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Main Authors: Joo, Hyo-Jun, Kim, Youngmin, Chen, Melvina, Burt, Daniel, Zhang, Lin, Son, Bongkwon, Luo, Manlin, Ikonic, Zoran, Lee, Chulwon, Cho, Yong-Hoon, Tan, Chuan Seng, Nam, Donguk
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2024
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Online Access:https://hdl.handle.net/10356/173311
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1733112024-01-24T01:38:36Z All-around HfO₂ stressor for tensile strain in GeSn-on-insulator nanobeam lasers Joo, Hyo-Jun Kim, Youngmin Chen, Melvina Burt, Daniel Zhang, Lin Son, Bongkwon Luo, Manlin Ikonic, Zoran Lee, Chulwon Cho, Yong-Hoon Tan, Chuan Seng Nam, Donguk School of Electrical and Electronic Engineering Engineering::Electrical and electronic engineering Atomic Layer Deposition Photonic Crystal Tensile strained GeSn alloys are considered a key enabler for the realization of complementary metal-oxide-semiconductor laser sources. However, the tensile strained GeSn lasers reported to date require complex fabrication processes for applying tensile strain in GeSn, preventing tensile GeSn lasers from becoming the mainstream technology for integrated photonics. Here, a unique strain engineering method is presented that can introduce a uniform tensile strain in GeSn lasers by harnessing a widely developed atomic layer deposition (ALD) process. 1D photonic crystal nanobeam lasers under homogenous tensile strain induced by an ALD HfO2 all-around stressor layer show a single-mode lasing peak with a ≈31 nm redshift and ≈2 times intensity increase. The lasing threshold of tensile strained GeSn lasers is ≈12% improved compared to the unstrained GeSn lasers. It is believed that the approach offers a new path toward the realization of practical group-IV laser sources for photonic-integrated circuits. Agency for Science, Technology and Research (A*STAR) Ministry of Education (MOE) National Research Foundation (NRF) The research of the project was in part supported by the Ministry of Education, Singapore, under grant AcRF TIER 1 (RG 115/21). This work was also supported by the National Research Foundation of Singapore through the Competitive Research Program (NRF-CRP19-2017-01). This work was also supported by the iGrant of Singapore A*STAR AME IRG (A2083c0053). This research was also supported by the National Research Foundation, Singapore and A*STAR under its Quantum Engineering Programme (NRF2022-QEP2-02-P13). 2024-01-24T01:38:36Z 2024-01-24T01:38:36Z 2023 Journal Article Joo, H., Kim, Y., Chen, M., Burt, D., Zhang, L., Son, B., Luo, M., Ikonic, Z., Lee, C., Cho, Y., Tan, C. S. & Nam, D. (2023). All-around HfO₂ stressor for tensile strain in GeSn-on-insulator nanobeam lasers. Advanced Optical Materials, 11(24), 2301115-. https://dx.doi.org/10.1002/adom.202301115 2195-1071 https://hdl.handle.net/10356/173311 10.1002/adom.202301115 2-s2.0-85172098815 24 11 2301115 en RG 115/21 NRF-CRP19-2017-01 A2083c0053 NRF2022-QEP2-02-P13 Advanced Optical Materials © 2023 Wiley-VCH GmbH. All rights reserved.
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Engineering::Electrical and electronic engineering
Atomic Layer Deposition
Photonic Crystal
spellingShingle Engineering::Electrical and electronic engineering
Atomic Layer Deposition
Photonic Crystal
Joo, Hyo-Jun
Kim, Youngmin
Chen, Melvina
Burt, Daniel
Zhang, Lin
Son, Bongkwon
Luo, Manlin
Ikonic, Zoran
Lee, Chulwon
Cho, Yong-Hoon
Tan, Chuan Seng
Nam, Donguk
All-around HfO₂ stressor for tensile strain in GeSn-on-insulator nanobeam lasers
description Tensile strained GeSn alloys are considered a key enabler for the realization of complementary metal-oxide-semiconductor laser sources. However, the tensile strained GeSn lasers reported to date require complex fabrication processes for applying tensile strain in GeSn, preventing tensile GeSn lasers from becoming the mainstream technology for integrated photonics. Here, a unique strain engineering method is presented that can introduce a uniform tensile strain in GeSn lasers by harnessing a widely developed atomic layer deposition (ALD) process. 1D photonic crystal nanobeam lasers under homogenous tensile strain induced by an ALD HfO2 all-around stressor layer show a single-mode lasing peak with a ≈31 nm redshift and ≈2 times intensity increase. The lasing threshold of tensile strained GeSn lasers is ≈12% improved compared to the unstrained GeSn lasers. It is believed that the approach offers a new path toward the realization of practical group-IV laser sources for photonic-integrated circuits.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Joo, Hyo-Jun
Kim, Youngmin
Chen, Melvina
Burt, Daniel
Zhang, Lin
Son, Bongkwon
Luo, Manlin
Ikonic, Zoran
Lee, Chulwon
Cho, Yong-Hoon
Tan, Chuan Seng
Nam, Donguk
format Article
author Joo, Hyo-Jun
Kim, Youngmin
Chen, Melvina
Burt, Daniel
Zhang, Lin
Son, Bongkwon
Luo, Manlin
Ikonic, Zoran
Lee, Chulwon
Cho, Yong-Hoon
Tan, Chuan Seng
Nam, Donguk
author_sort Joo, Hyo-Jun
title All-around HfO₂ stressor for tensile strain in GeSn-on-insulator nanobeam lasers
title_short All-around HfO₂ stressor for tensile strain in GeSn-on-insulator nanobeam lasers
title_full All-around HfO₂ stressor for tensile strain in GeSn-on-insulator nanobeam lasers
title_fullStr All-around HfO₂ stressor for tensile strain in GeSn-on-insulator nanobeam lasers
title_full_unstemmed All-around HfO₂ stressor for tensile strain in GeSn-on-insulator nanobeam lasers
title_sort all-around hfo₂ stressor for tensile strain in gesn-on-insulator nanobeam lasers
publishDate 2024
url https://hdl.handle.net/10356/173311
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