High-performance Ge-on-insulator lateral p-i-n waveguide photodetectors for electronic–photonic integrated circuits at telecommunication wavelengths

• المؤلفون الرئيسيون: Huang, Tzu-Yang, Bansal, Radhika, Ghosh, Soumava, Lee, Kwang Hong, Chen, Qimiao, Tan, Chuan Seng, Chang, Guo-En
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2024
• الموضوعات: Engineering; Ge; Photoresistor
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/173591
• المؤسسة: Nanyang Technological University

We report high-performance germanium-on-insulator (GeOI) waveguide photodetectors (WGPDs) for electronic– photonic integrated circuits (EPICs) operating at telecommunication wavelengths. The GeOI samples were fabricated using layer transfer and wafer-bonding techniques, and a high-quality Ge ac...