Characterization of oxide interface charges in trench field stop IGBT

Characterization of oxide interface charges in trench field stop IGBT

Oxide interface charges is an important factor to be assessed in technology development especially for a trench-gated power device. The plasma reactive ion etching process is used to form highly vertical trenches whereby the oxide-silicon interface is often saturated by large amount of oxide interfa...

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Bibliographic Details
Main Authors: Sim, Zhi Lin, Chin, Wei Mien, Bong, Yi Xiang, Goh, David Eng Hui, Ngwan, Voon Cheng
Other Authors: School of Materials Science and Engineering
Format: Conference or Workshop Item
Language:English
Published: 2024
Subjects:
Engineering
Trench power device
Oxide interface charges
Forming gas annealing
Online Access:https://hdl.handle.net/10356/175647
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Institution: Nanyang Technological University
Language: English
Description
Summary:Oxide interface charges is an important factor to be assessed in technology development especially for a trench-gated power device. The plasma reactive ion etching process is used to form highly vertical trenches whereby the oxide-silicon interface is often saturated by large amount of oxide interface charges. These charges are responsible for the device performance, stability, and long-term reliability degradation. In this work, we characterized the charges by performing various %H2/N2 forming gas annealing in FS IGBT and determined the optimal anneal condition to intrinsically passivate the oxide interface charges.

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