Characterization of oxide interface charges in trench field stop IGBT

• Main Authors: Sim, Zhi Lin, Chin, Wei Mien, Bong, Yi Xiang, Goh, David Eng Hui, Ngwan, Voon Cheng
• Other Authors: School of Materials Science and Engineering
• Format: Conference or Workshop Item
• Language: English
• Published: 2024
• Subjects: Engineering; Trench power device; Oxide interface charges; Forming gas annealing
• Online Access: https://hdl.handle.net/10356/175647
• Institution: Nanyang Technological University

Oxide interface charges is an important factor to be assessed in technology development especially for a trench-gated power device. The plasma reactive ion etching process is used to form highly vertical trenches whereby the oxide-silicon interface is often saturated by large amount of oxide interface charges. These charges are responsible for the device performance, stability, and long-term reliability degradation. In this work, we characterized the charges by performing various %H2/N2 forming gas annealing in FS IGBT and determined the optimal anneal condition to intrinsically passivate the oxide interface charges.