Characterization of oxide interface charges in trench field stop IGBT
Oxide interface charges is an important factor to be assessed in technology development especially for a trench-gated power device. The plasma reactive ion etching process is used to form highly vertical trenches whereby the oxide-silicon interface is often saturated by large amount of oxide interfa...
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| Main Authors: | , , , , |
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| 其他作者: | |
| 格式: | Conference or Workshop Item |
| 語言: | English |
| 出版: |
2024
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| 主題: | |
| 在線閱讀: | https://hdl.handle.net/10356/175647 |
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| 機構: | Nanyang Technological University |
| 語言: | English |
| 總結: | Oxide interface charges is an important factor to be assessed in technology development especially for a trench-gated power device. The plasma reactive ion etching process is used to form highly vertical trenches whereby the oxide-silicon interface is often saturated by large amount of oxide interface charges. These charges are responsible for the device performance, stability, and long-term reliability degradation. In this work, we characterized the charges by performing various %H2/N2 forming gas annealing in FS IGBT and determined the optimal anneal condition to intrinsically passivate the oxide interface charges. |
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