PMOSFET NBTI (negative-bias temperature instability) measurement using ultra-fast switching method

• المؤلف الرئيسي: Boo, Ann Ann.
• مؤلفون آخرون: Ang Diing Shenp
• التنسيق: Final Year Project
• اللغة: English
• منشور في: 2009
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/17896

Negative bias temperature instability was first discovered in 1966. It only became an important reliability issue in silicon integrated circuits because device scaling leads to an increase in gate electric field. Although numerous papers have been published on NBTI, there were many discrepancies bet...