PMOSFET NBTI (negative-bias temperature instability) measurement using ultra-fast switching method

• 主要作者: Boo, Ann Ann.
• 其他作者: Ang Diing Shenp
• 格式: Final Year Project
• 語言: English
• 出版: 2009
• 主題: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• 在線閱讀: http://hdl.handle.net/10356/17896

Negative bias temperature instability was first discovered in 1966. It only became an important reliability issue in silicon integrated circuits because device scaling leads to an increase in gate electric field. Although numerous papers have been published on NBTI, there were many discrepancies bet...