Design and analysis of robust sensing schemes for resisitive memory

• المؤلف الرئيسي: An, Byungkwon
• مؤلفون آخرون: Kim Tae Hyoung
• التنسيق: Thesis-Doctor of Philosophy
• اللغة: English
• منشور في: Nanyang Technological University 2024
• الموضوعات: Engineering; Resistive random-access memory (RRAM); Sensing scheme; Emerging non-volatile memories (eNVMs); Resistance ratio (R-Ratio); Resistive memory; Time-based sensing scheme; Hybrid cell-to-cell comparison-based sensing scheme; Non-volatile memories; Computing in memory (CIM); Multiply-and-accumulate (MAC); Phase-change random access memory (PRAM); Spin-transfer torque magnetic random-access memory (STT-RAM); Memory integrated circuit; Multi-level cells (MLC)
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/181559

Representatively, memory has been limitedly used in advances, such as Dynamic Random Access Memory (DRAM), Static Random Access Memory (SRAM), and Flash Memory. However, nowadays, memory is widely used in smartphones, automobiles, and the Internet of Things (IoT) in everyday electronic devices. Furt...