Rapid thermal annealing for ultra-shallow junction in deep submicron CMOS integrated circuits

Rapid thermal annealing for ultra-shallow junction in deep submicron CMOS integrated circuits

In this MSC dissertation, the focus of the study has been on the effect of critical parameters of rapid thermal anneal on shallow implants for ultra-shallow junction formation. Spike anneal was found to be more effective than soak anneal for ultra-shallow function formation.

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Bibliographic Details
Main Author: Qin, Fei Tao
Other Authors: Lau Wai Shing
Format: Theses and Dissertations
Language:English
Published: 2009
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
Online Access:http://hdl.handle.net/10356/19276
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Institution: Nanyang Technological University
Language: English
Description
Summary:In this MSC dissertation, the focus of the study has been on the effect of critical parameters of rapid thermal anneal on shallow implants for ultra-shallow junction formation. Spike anneal was found to be more effective than soak anneal for ultra-shallow function formation.

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