Charge-pumping studies of hot-carrier effects in submicrometer PMOSFETs

Charge-pumping studies of hot-carrier effects in submicrometer PMOSFETs

In this study, a constant amplitude charge-pumping (CP) measurement system was successfully setup. This system was used to analyse hot-carrier effects in submicrometer p-channel MOSFETs (metal-oxide-semiconductor field effect transistor) during hot-carrier stress and after termination of hot-carrier...

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Bibliographic Details
Main Author: Ang, Chew Hoe
Other Authors: Wong, Terence Kin Shun
Format: Theses and Dissertations
Language:English
Published: 2009
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Online Access:http://hdl.handle.net/10356/19732
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Institution: Nanyang Technological University
Language: English
Description
Summary:In this study, a constant amplitude charge-pumping (CP) measurement system was successfully setup. This system was used to analyse hot-carrier effects in submicrometer p-channel MOSFETs (metal-oxide-semiconductor field effect transistor) during hot-carrier stress and after termination of hot-carrier stress.

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